STMicroelectronics Announces New 45W and 150W MasterGaN Devices

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STMicroelectronics introduces 5W and 150W MasterGaN devices for high-efficiency power conversion.

Due to apparent advantages of wide-bandgap semiconductors in power electronics, industries are migrating from silicon MOSFETs towards power converters implemented by wide-bandgap semiconductors for more compact form-factor, high energy density, high current and voltage ratings, and high efficiency.

To help in this transitioning to high-efficiency wide-bandgap technology, STMicroelectronics announces the release of MasterGaN3 and MasterGaN5 integrated power packages for applications up to 45W and 150W, respectively.

The addition of these packages gives the designers flexibility to choose among the optimum Gallium Nitride (GaN) device and driver solution when designing power electronic devices such as switched-mode power supplies, chargers, adapters, high-voltage Power-Factor Correction (PFC), and DC/DC converters.

The devices integrate two 650V power transistors with optimized high-voltage gate drivers and associated safety and protection circuitry, eliminating gate-driver and circuit-layout design challenges. Moreover, in the GaN power transistors of MasterGaN3 devices have asymmetrical on-resistance (Rds(on)) of 225mΩ and 450mΩ, making these devices suited to soft-switching and active-rectification converters. In MasterGaN5 both transistors have 450mΩ Rds(on) for use in topologies such as LLC-resonant and Active Clamp Flyback.

The MasterGaN devices are compatible with logic signals from 3.3V to 15V, which simplifies connection of a host DSP, FPGA, or microcontroller, and external devices such as Hall sensors. They also feature protection including low-side and high-side under-voltage lockout (UVLO), gate-driver interlocks, over-temperature protection, and a shutdown pin.

The devices are housed in a 9mm x 9mm GQFN package optimized for high-voltage applications with 2mm creepage distance between high-voltage and low-voltage pads. 

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